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mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw7ic3825n wideband integrated circuit is designed with on--chip matching that makes it usable from 3400--3600 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. ? typical wimax performance: v dd =28volts,i dq1 = 130 ma, i dq2 = 230 ma, p out = 5 watts avg., f = 3600 mhz, ofdm 802.16d, 64 qam 3 / 4 ,4bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 25 db power added efficiency ? 15% device output signal par ? 8. 5 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset ? --48 dbc in 1 mhz channel bandwidth driver applications ? typical wimax performance: v dd =28volts,i dq1 = 190 ma, i dq2 = 230 ma, p out = 0.5 watts avg., f = 3400 and 3600 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 23.5 db power added efficiency ? 3.5% device output signal par ? 9. 2 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset ? --55 dbc in 1 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 3500 mhz, 25 watts cw output power ? stable into a 5:1 vswr. all spurs below --60 dbc @ 0 to 44 dbm cw p out ? typical p out @ 1 db compression point ? 30 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip matching (50 ohm input, rf choke to ground) ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf.select docum entation/application notes -- an1977 or an1987. document number: mw7ic3825n rev. 1, 11/2010 freescale semiconductor technical data mw7ic3825nr1 MW7IC3825GNR1 mw7ic3825nbr1 3400--3600 mhz, 5 w avg., 28 v wimax rf ldmos wideband integrated power amplifiers case 1886--01 to--270 wb--16 plastic mw7ic3825nr1 case 1887--01 to--270 wb--16 gull plastic MW7IC3825GNR1 case 1329--09 to--272 wb--16 plastic mw7ic3825nbr1 figure 1. functional block diagram figure 2. pin connections quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 (top view) gnd v gs1 rf in v gs1 gnd rf out /v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 v ds1 v gs2 nc nc v ds1 nc nc note: exposed backside of the package is the source terminal for the transistors. ? freescale semiconductor, inc., 2008, 2010. a ll rights reserved.
2 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 table 1. maximum ratings rating symbol value unit drain--source voltage v ds --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 45 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case wimax application stage 1, 28 vdc, i dq1 = 130 ma (case temperature 71 c, p out = 5 w cw) stage 2, 28 vdc, i dq2 = 230 ma r jc 4.7 1.3 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 -- on characteristics gate threshold voltage (v ds =10vdc,i d =25 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1 = 130 ma) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (4) (v dd =28vdc,i dq1 = 130 ma, measured in functional test) v gg(q) 3.5 4.2 5 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. v gg =1.55xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. (continued)
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 -- off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 -- on characteristics gate threshold voltage (v ds =10vdc,i d = 120 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2 = 230 ma) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (1) (v dd =28vdc,i dq2 = 230 ma, measured in functional test) v gg(q) 2.5 3.3 4 vdc drain--source on--voltage (v gs =10vdc,i d =1adc) v ds(on) 0.2 0.5 1.2 vdc stage 2 -- dynamic characteristics (2) output capacitance (v ds =28vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 72.3 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma, p out =5wavg., f = 3600 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ 8.5 mhz offset. power gain g ps 21 25 32 db power added efficiency pae 12 15 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.5 8.5 ? db adjacent channel power ratio acpr ? -- 4 8 -- 4 5 dbc input return loss irl ? -- 1 2 -- 6 db typical performances ofdm signal -- 10 mhz channel bandwidth (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma, p out = 5 w avg., f = 3400 mhz and f = 3600 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. relative constellation error (4) rce ? -- 3 3 ? db error vector magnitude (4) evm ? 2.2 ? %rms 1. v gg =1.22xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output. 3. measurement made with device in str aight lead configuration before any lead forming operation is applied. 4. rce = 20log(evm/100). (continued)
4 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma, 3400--3600 mhz bandwidth p out @ 1 db compression point, cw p1db ? 30 ? w imd symmetry @ 2 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 83 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 200 mhz bandwidth @ p out =5wavg. g f ? 0.7 ? db average deviation from linear phase in 200 mhz bandwidth @p out =25wcw ? 3.15 ? average group delay @ p out = 25 w cw, f = 3500 mhz delay ? 3.21 ? ns part--to--part insertion phase variation @ p out =25wcw, f = 3500 mhz, six sigma window ? ? 13.88 ? gain variation over temperature (--30 cto+85 c) ? g ? 0.046 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.015 ? db/ c typical driver performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 190 ma, i dq2 = 230 ma, p out = 0.5 w avg., f = 3400 mhz and f = 3600 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ 8.5 mhz offset. power gain g ps ? 23.5 ? db power added efficiency pae ? 3.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par ? 9.2 ? db adjacent channel power ratio acpr ? -- 5 5 ? dbc input return loss irl ? -- 1 2 ? db
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 5 rf device data freescale semiconductor figure 3. mw7ic3825nr1(gnr1)( nbr1) test circuit schematic rf input rf output 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc dut quiescent current temperature compensation nc nc z39 z38 z37 z36 z34 z35 z33 z31 z32 c8 z29 z28 z24 z27 z25 z26 z23 z22 z21 z20 z19 z18 z17 z16 z15 z40 z43 z41 z44 z45 z42 z14 c4 c3 c2 c12 + v d2 c10 c11 r3 z13 c17 c7 z12 z11 z10 z9 z8 z7 z6 z5 z3 z4 z2 c6 z1 c9 c13 r2 c16 v g2 c14 c15 r1 v g1 v d1 v gs1 v gs2 c1 c5 v d1 nc nc z1 0.118 x 0.044 microstrip z2 0.205 x 0.044 microstrip z3 0.083 x 0.096 microstrip z4 0.195 x 0.044 microstrip z5 0.094 x 0.132 microstrip z6 0.509 x 0.044 microstrip z7 0.083 x 0.091 microstrip z8 0.372 x 0.044 microstrip z9 0.078 x 0.192 microstrip z10 0.078 x 0.044 microstrip z11 0.079 x 0.141 microstrip z12 0.243 x 0.044 microstrip z13 0.605 x 0.044 microstrip z14 0.232 x 0.340 microstrip z15 0.042 x 0.340 microstrip z16 0.112 x 0.150 microstrip z17 0.230 x 0.090 microstrip z18 0.125 x 0.125 microstrip z19 0.228 x 0.100 microstrip z20 0.076 x 0.165 microstrip z21 0.289 x 0.100 microstrip z22 0.083 x0.110 microstrip z23 0.375 x 0.100 microstrip z24 0.185 x 0.080 microstrip z25 0.079 x 0.020 microstrip z26 0.185 x 0.020 microstrip z27 0.185 x 0.100 microstrip z28 0.093 x 0.100 microstrip z29 0.063 x 0.044 microstrip z30 0.103 x 0.044 microstrip z31 0.080 x 0.121 microstrip z32 0.080 x0.112 microstrip z33 0.193 x 0.044 microstrip z34 0.080 x 0.051 microstrip z35 0.157 x 0.055 microstrip z36 0.080 x 0.044 microstrip z37 0.080 x 0.131 microstrip z38 0.040 x 0.044 microstrip z39 0.073 x 0.044 microstrip z40 0.574 x 0.044 microstrip z41 l = 0.305 wi = 0.150 angle = 130 microstrip z42 0.523 x 0.044 microstrip z43 0.574 x 0.044 microstrip z44 l = 0.305 wi = 0.150 angle = 130 microstrip z45 0.523 x 0.044 microstrip pcb taconic tlx8--0300, 0.020 , r =2.55 z30
6 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 table 6. mw7ic3825nr1(gnr1)( nbr1) test circuit component designations and values part description part number manufacturer c1, c13, c14 2.2 f, 50 v chip capacitors c3225x7r1h225m tdk c2, c3 10 f, 50 v chip capacitors c5750x5r1h106m tdk c4, c5, c9, c10 2.2 pf chip capacitors atc100b2r2bt500xt atc c6, c7 0.5 pf chip capacitors atc100b0r5bt500xt atc c8 2 pf chip capacitor atc100b2r0bt500xt atc c11 33 pf chip capacitor atc100b330jt500xt atc c12 220 f, 63 v electrolytic capacitor 222213668221 bc components c15, c16 4.7 f, 50 v chip capacitors c4532x5r1h475m tdk c17 0.3 pf chip capacitor atc100b0r3bt500xt atc r1, r2 1k ? , 1/8 w chip resistors crcw08051001fkea vishay r3 10 ? , 1/4 w chip resistor crcw120610r0fkea vishay figure 4. mw7ic3825nr1(gnr1)(nbr1 ) test circuit component layout cut out area mw7ic3825n/nb rev. 7 c6 v d1 c15 r1 c14 c7 c17 r2 c16 c13 c9 r3 c11 c10 c8 c1 c5 c4 c3 c2 c12 v d2 v g1 v g2 v d1
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 7 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 3400 irl g ps acpr f, frequency (mhz) figure 5. wimax broadband performance @ p out = 5 watts avg. -- 11 -- 7 -- 8 -- 9 -- 1 0 23.2 25.2 25 24.8 -- 4 9 18 17 16 15 -- 4 4 -- 4 5 -- 4 6 -- 4 7 d , drain efficiency (%) h d g ps , power gain (db) 24.6 24.4 24 23.8 23.6 23.4 3425 3450 3475 3500 3525 3550 3575 3600 14 -- 4 8 -- 1 2 parc parc (db) -- 2 0 -- 0 . 5 -- 1 -- 1 . 5 -- 2 . 5 acpr (dbc) 24.2 v dd =28vdc,p out =5w(avg.),i dq1 = 130 ma, i dq2 = 230 ma ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth input signal par = 9.5 d b @ 0.01% pr obabilit y on ccdf -- 2 -- 0 -- 0 . 5 -- 1 -- 1 . 5 -- 2 . 5 irl g ps acpr f, frequency (mhz) figure 6. wimax broadband performance @ p out =20dbmavg. 23.6 25.6 25.4 25.2 -- 5 9 4 3 2 1 -- 5 4 -- 5 5 -- 5 6 -- 5 7 d , drain efficiency (%) h d g ps , power gain (db) 25 24.8 24.6 24.4 24.2 24 23.8 0 -- 5 8 irl, input return loss (db) -- 11 -- 7 -- 8 -- 9 -- 1 0 -- 1 2 v dd =28vdc,p out =20dbm(avg.),i dq1 = 130 ma, i dq2 = 230 ma ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth input signal par = 9.5 d b @ 0.01% pr obabilit y on ccdf 3400 3425 3450 3475 3500 3525 3550 3575 3600 parc acpr (dbc) parc (db) figure 7. power gain versus output power @i dq1 = 130 ma 100 20 26 1 i dq2 = 350 ma 290 ma p out , output power (watts) cw v dd =28vdc i dq1 = 130 ma f = 3500 mhz 110 ma 230 ma 24 23 22 10 g ps , power gain (db) 25 175 ma figure 8. power gain versus output power @i dq2 = 230 ma 20 26 1 i dq1 = 195 ma p out , output power (watts) cw 70 ma 24 23 22 10 100 g ps , power gain (db) 25 100 ma v dd =28vdc i dq2 = 230 ma f = 3500 mhz 21 21 130 ma 160 ma
8 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 typical characteristics figure 9. intermodulation distortion products versus tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 im3--u -- 2 0 -- 3 0 -- 5 0 0.1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 2 w (pep), i dq1 = 130 ma i dq2 = 230 ma, two--tone measurements (f1 + f2)/2 = center frequency of 3500 mhz figure 10. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 9 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 1 13 17 21 40 30 25 20 15 10 d , drain efficiency (%) --1db=6w d acpr parc acpr (dbc) -- 2 0 -- 3 5 -- 4 0 -- 5 0 -- 4 5 25 g ps , power gain (db) 24.5 24 23.5 23 22 g ps 100 0 60 -- 5 0 -- 2 0 p out , output power (watts) avg. wimax t c =--30 _ c 25 _ c 85 _ c 10 1 50 40 30 20 -- 2 5 -- 3 0 -- 3 5 -- 4 0 -- 4 5 acpr (dbc) g ps d d , drain efficiency (%), g ps , power gain (db) -- 3 0 _ c 25 _ c 85 _ c acpr 10 figure 11. wimax, acpr, power gain and drain efficiency versus output power 1 22.5 -- 5 5 35 -- 2 5 --2db=8.5w -- 3 d b = 11 . 5 w v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma f = 3500 mhz, ofdm 802.16d, 64 qam 3 / 4 4 bursts, 10 mhz channel bandwidth input signal par = 9.5 db @ 0.01% probabilit y on ccdf -- 3 0 _ c 25 _ c 85 _ c 0 -- 3 0 10 mhz channel bandwidth, input signal par = 9.5 db @ 0. 01% probab ility on ccdf f = 3500 mhz, ofdm 802.16d 64 qam 3 / 4 ,4bursts v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma parc
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 9 rf device data freescale semiconductor typical characteristics 250 10 9 90 t j , junction temperature ( c) 10 8 10 7 10 4 110 130 150 170 190 mttf (hours) 210 230 2nd stage 1st stage 10 6 4200 -- 2 5 30 2400 -- 4 0 15 s21 f, frequency (mhz) figure 12. broadband frequency response s11 -- 2 0 25 -- 2 5 20 -- 3 0 15 -- 3 5 3400 3200 3000 2800 2600 s11 (db) s21 (db) v dd =28vdc i dq1 = 130 ma, i dq2 = 230 ma 3600 4000 figure 13. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =28vdc,p out = 5 w avg., and pae = 15%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 5 0 -- 5 -- 1 0 -- 1 5 -- 2 0 3800 -- 5 -- 1 0 -- 1 5 0 5 10 10 5 wimax test signal 10 0.0001 100 0 peak--to--average (db) figure 14. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal ofdm 802.16d, 64 qam 3 / 4 ,4bursts 10 mhz channel bandwidth, input signal par = 9.5 db @ 0. 01% probab ility on ccdf -- 6 0 -- 1 0 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 10 mhz channel bw 20 515 10 0 -- 5 -- 1 0 -- 2 0 f, frequency (mhz) figure 15. wimax spectrum mask specifications -- 1 5 acpr in 1 mhz integrated bw acpr in 1 mhz integrated bw
10 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 f = 3600 mhz f = 3400 mhz z o =50 ? z load f = 3600 mhz f = 3400 mhz z source v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma, p out =5wavg. f mhz z source ? z load ? 3400 31.82 -- j19.29 4.58 -- j7.62 3425 32.86 -- j19.70 4.42 -- j7.33 3450 33.95 -- j20.93 4.22 -- j7.20 3475 35.11 -- j22.97 4.13 -- j7.22 3500 36.33 -- j25.82 4.13 -- j7.26 3525 37.61 -- j29.49 4.07 -- j7.20 3550 38.95 -- j33.97 3.81 -- j6.99 3575 40.35 -- j39.26 3.48 -- j6.77 3600 41.81 -- j45.37 3.21 -- j6.72 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. series equivalent source and load impedance z source z load input matching network device under test output matching network
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 11 rf device data freescale semiconductor table 7. common source s--parameters (v dd =28v,i dq1 = 130 ma, i dq2 = 230 ma, t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 3000 0.260 --47.0 7.550 --61.6 0.00485 --43.9 0.724 --87.7 3050 0.177 --63.4 8.610 --102.0 0.00423 --72.7 0.713 --113.0 3100 0.139 --68.0 10.000 --143.0 0.00424 --98.1 0.675 --141.0 3150 0.117 --59.6 11.300 177.0 0.00293 --122.0 0.612 --166.0 3200 0.190 --61.1 13.600 139.0 0.00322 --98.2 0.627 171.0 3250 0.283 --85.6 16.800 95.7 0.00533 --118.0 0.629 138.0 3300 0.395 --118.0 19.900 49.1 0.00762 --146.0 0.547 102.0 3350 0.493 --155.0 22.300 0.9 0.00950 --178.0 0.421 65.9 3400 0.575 166.0 24.000 --48.3 0.0116 148.0 0.235 23.1 3450 0.603 126.0 23.800 --99.4 0.0132 111.0 0.053 --130.0 3500 0.537 82.8 19.900 --155.0 0.0135 58.2 0.409 124.0 3550 0.479 56.7 15.600 165.0 0.00994 27.0 0.509 80.6 3600 0.458 29.8 12.900 128.0 0.00810 1.1 0.585 49.7 3650 0.465 1.3 11.200 94.1 0.00680 --19.7 0.637 21.3 3700 0.427 --27.1 9.830 58.3 0.00636 --42.4 0.672 -- 4 . 3 3750 0.429 --53.0 8.600 25.7 0.00546 --65.7 0.707 --28.9 3800 0.407 --81.6 7.770 -- 7 . 2 0.00476 --82.1 0.730 --53.8 3850 0.395 --110.0 7.020 --39.8 0.00445 --97.7 0.752 --77.2 3900 0.388 --139.0 6.380 --71.8 0.00421 --113.0 0.761 --102.0 3950 0.384 --167.0 5.900 --104.0 0.00454 --126.0 0.779 --125.0 4000 0.389 165.0 5.460 --135.0 0.00531 --145.0 0.779 --150.0
12 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 alternative peak tune load pull characteristics 28 53 19 p3db = 47.45 dbm (55.6 w) p in , input power (dbm) v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma pulsed cw, 10 sec(on), 10% duty cycle f = 3400 mhz 51 49 47 45 43 20 22 21 24 23 27 25 actual p1db = 46.66 dbm (46.3 w) 52 50 46 48 44 26 18 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 17 16 ideal test impedances per compression level z source ? z load ? p1db 52.4 -- j42.5 3.5 -- j8.5 figure 17. pulsed cw output power versus input power @ 28 v @ 3400 mhz 30 53 19 p in , input power (dbm) v dd =28vdc,i dq1 = 130 ma, i dq2 = 230 ma pulsed cw, 10 sec(on), 10% duty cycle f = 3600 mhz 51 49 47 45 43 20 22 21 24 23 27 25 actual ideal 52 50 46 48 44 26 18 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 28 29 p3db = 47.11 dbm (51.5 w) p1db = 46.13 dbm (41.0 w) test impedances per compression level z source ? z load ? p1db 126.6 -- j41.9 3.3 -- j8.3 figure 18. pulsed cw output power versus input power @ 28 v @ 3600 mhz
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 13 rf device data freescale semiconductor package dimensions
14 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1
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18 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1
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mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 21 rf device data freescale semiconductor
22 rf device data freescale semiconductor mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 product documentation and software refer to the following documents and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 nov. 2008 ? initial release of data sheet 1 nov. 2010 ? corrected data sheet to remove ?dc block? from on--chip matching feature bullet and replaced with ?rf choke to ground?, p. 1 ? modified data sheet to reflect rf test reduction de scribed in product and proc ess change notification number, pcn13628, p. 1, 3 ? added ?rf input choke to ground? circuitry to functi onal block diagram and test circuit schematic, p. 1, 5 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 22
mw7ic3825nr1 mw7ic 3825gnr1 mw7ic3825nbr1 23 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw7ic3825n rev. 1, 11/2010

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